IRFR3410 |
RFQ for IRFR3410 Required Field |
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| Technical/Catalog Information | IRFR3410 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 31A |
| Rds On (Max) @ Id, Vgs | 39 mOhm @ 18A, 10V |
| Input Capacitance (Ciss) @ Vds | 1690pF @ 25V |
| Power - Max | 3W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 56nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRFR3410 IRFR3410 |
| Product | Manufacturers | Pack | D/C |
| IRFR3410 | - | 2004+ | 38000 |
Typical Application |
| ·High frequency DC-DC converters |
| Parameter | Max. | Units | |
| VDS | Drain-Source Voltage |
100 |
V |
| VGS | Gate-to-Source Voltage |
±20 | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 31 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 22 | |
| IDM | Pulsed Drain Current | 125 | |
| PD @TC = 25°C | Maximum Power Dissipation | 110 | W |
| PD @TA= 25°C | Maximum Power Dissipation |
3.0 | |
| Linear Derating Factor | 0.71 | mW/°C | |
| dv/dt | Peak Diode Recovery dv/dt | 15 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
